Self-aligned wrap-around contacts for nanosheet devices
US9847390B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2017 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Feb 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
This disclosure relates to forming a wrap-around contact on a nanosheet transistor, the method including: forming an etch-stop layer over a continuous outer surface of a raised source/drain (S/D) region of the nanosheet transistor; forming a sacrificial layer over the etch-stop layer, the etch-stop layer including a different material than the sacrificial layer; depositing a dielectric layer over the sacrificial layer; removing an upper portion of the dielectric layer to expose a portion of the sacrificial layer; removing the sacrificial layer selective to the etch-stop layer; and depositing a conductor in the removed upper portion of the dielectric layer to form a wrap-around contact and a second contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.