Semiconductor device contact structure having stacked nickel, copper, and tin layers
US9853006B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2016 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Jun 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A three dimensional multi-die package includes a first die and second die. The first die includes a contact attached to solder. The second die is thinned by adhesively attaching a handler to a top side of the second die and thinning a bottom side of the second die. The second die includes a multilayer contact of layered metallurgy that inhibits transfer of adhesive thereto. The layered metallurgy includes at least one layer that is wettable to the solder. The multilayer contact may include a Nickel layer, a Copper layer upon the Nickel layer, and a Nickel-Iron layer upon the Copper layer. The multilayer contact may also include a Nickel layer, a Copper-Tin layer upon the Nickel layer, and a Tin layer upon the Copper-Tin layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.