Reprogrammable non-volatile ferroelectric latch for use with a memory controller
US9858979B1 · kind B1 · utility
86Cited by
5References
20Claims
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Key dates
| Filing date | Oct 5, 2016 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Oct 5, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2273
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and apparatuses related to a reprogrammable non-volatile latch are described. A latch may include ferroelectric cells, ferroelectric capacitors, a sense component, and other circuitry and components related to ferroelectric memory technology. The ferroelectric latch may be independent from (or exclusive of) a main ferroelectric memory array. The ferroelectric latch may be positioned anywhere in the memory device. In some instances, a ferroelectric latch may be positioned and configured to be dedicated to single piece of circuitry in the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.