Semiconductor structure
US9859282B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2016 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Sep 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
Abstract
A high-density semiconductor structure includes a substrate, a bit line and a first memory unit. The bit line, disposed on the substrate, has a first side and a second side. The first memory unit includes a first transistor, a first capacitor, a second transistor and a second capacitor. The first transistor disposed on the substrate has a first terminal and a second terminal. The first terminal connects the bit line. The first capacitor connects the second terminal of the first transistor. The second transistor disposed on the substrate has a third terminal and a fourth terminal. The third terminal connects the bit line. The second capacitor connects the fourth terminal of the second transistor. The first capacitor and the second capacitor are separated from the bit line in a direction perpendicular to an extending direction of the bit line and located on the first side of the bit line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.