Single-electron transistor with wrap-around gate

US9859409B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kangguo Cheng · Schenectady, US
• Xin Miao · Guilderland, US
• Wenyu Xu · Albany, US
• Chen Zhang · Guilderland, US

Key dates

• Filing date: Apr 28, 2016
• Grant date: Jan 2, 2018
• Expiry date: Apr 28, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/512

Abstract

Transistors and methods of forming the same include forming a fin having an active layer between two sacrificial layers. A dummy gate is formed over the fin. Spacers are formed around the dummy gate. The dummy gate is etched away to form a gap over the fin. Material from the two sacrificial layers is etched away in the gap. A gate stack is formed around the active layer in the gap. Source and drain regions are formed in contact with the active layer.