Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures
US9865456B1 · kind B1 · utility
379Cited by
2References
26Claims
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Assignee
Inventors
Key dates
| Filing date | Aug 12, 2016 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Aug 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.