Etching method using plasma, and method of fabricating semiconductor device including the etching method
US9865474B2 · kind B2 · utility
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9References
12Claims
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Key dates
| Filing date | Nov 9, 2016 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Nov 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.