Electrode structure for resistive memory device
US9865798B2 · kind B2 · utility
4Cited by
13References
30Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 24, 2015 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Feb 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an interconnect layer and a bottom electrode of a resistive memory device. The bottom electrode is coupled to the interconnect layer, and the bottom electrode is comprised of cobalt tungsten phosphorus (CoWP).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.