Semiconductor process
US9871113B2 · kind B2 · utility
0Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2016 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Mar 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor process including the following steps is provided. An epitaxial layer is formed on a substrate. An oxide layer is formed on the epitaxial layer, wherein the oxide layer includes a chemical oxide layer, a high-temperature oxide (HTO) layer or a surface modification oxide layer. An ion implant process is performed to the epitaxial layer to form a doped region in the epitaxial layer. The oxide layer is removed by using a diluted hydrofluoric acid (DHF) solution after performing the ion implant process, wherein a volume ratio of water to a hydrofluoric acid (HF) in the DHF solution is 200:1 to 1000:1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.