Methods of vapor deposition with multiple vapor sources

US9873942B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Christophe Pomarede · Phoenix, US
• Eric James Shero · Phoenix, US
• Mohith Verghese · Phoenix, US
• Jan Willem Maes · Wilrijk, BE
• Chang-Gong Wang · Chandler, US

Key dates

• Filing date: Dec 11, 2015
• Grant date: Jan 23, 2018
• Expiry date: Jul 20, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28194
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods of vapor deposition include multiple vapor sources. A vapor deposition method includes delivering pulses of a vapor containing a first source chemical to a reaction space from at least two separate source vessels simultaneously. The pulses can contain a substantially consistent concentration of the first source chemical. The method can include purging the reaction space of an excess of the first source chemical after the delivering, and delivering pulses of a vapor containing a second source chemical to the reaction space from at least two separate source vessels simultaneously after the purging.