Patent · US Active

Substrates with buried isolation layers and methods of formation thereof

US9875926B2 · kind B2 · utility

0Cited by

13References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Iris Moder · Villach, AT
Ingo Muri · Villach, AT
Johannes Baumgartl · Arnoldstein, AT
Oliver Hellmund · Straubing, DE
Manfred Engelhardt · Feldkirchen-Westerham, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Nov 29, 2015
Grant date	Jan 23, 2018
Priority date	—
Expiry date	Nov 29, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76297
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for fabricating a semiconductor device includes forming an opening in a first epitaxial lateral overgrowth region to expose a surface of the semiconductor substrate within the opening. The method further includes forming an insulation region at the exposed surface of the semiconductor substrate within the opening and filling the opening with a second semiconductor material to form a second epitaxial lateral overgrowth region using a lateral epitaxial growth process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.