Spacer defined fin growth and differential fin width
US9875936B1 · kind B1 · utility
2Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2016 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Nov 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming fins with a straight profile by preventing fin bending during STI fill and annealing are disclosed. Embodiments include providing STI regions separated by Si regions, each topped with a hardmask; planarizing the STI regions; removing the hardmask over a portion of the Si regions, forming recesses; forming a conformal spacer layer over the STI regions and in the recesses; removing horizontal portions of the spacer layer; epitaxially growing Si in each recess, forming fins; and etching the STI regions and a remainder of the spacer layer down to the Si regions to reveal the fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.