Method of forming a semiconductor device structure using differing spacer widths and the resulting semiconductor device structure

US9876111B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Steffen Sichler · Dresden, DE
• Peter Javorka · Radebeul, DE
• Juergen Faul · Radebeul, DE
• Sylvain Baudot · Dresden, DE
• Thorsten Kammler · Radeberg, DE

Key dates

• Filing date: Apr 5, 2016
• Grant date: Jan 23, 2018
• Expiry date: Apr 5, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/856

Abstract

A method of forming a semiconductor device structure is disclosed including providing a first active region and a second active region in an upper surface portion of a substrate, the first and second active regions being laterally separated by at least one isolation structure, forming a first gate structure comprising a first gate dielectric and a first gate electrode material over the first active region, and a second gate structure comprising a second gate dielectric and a second gate electrode material over the second active region, wherein a thickness of the second gate dielectric is greater than the thickness of the first gate dielectric, and forming a first sidewall spacer structure to the first gate structure and a second sidewall spacer structure to the second gate structure, wherein a lateral thickness of the second sidewall spacer structure is greater than a lateral thickness of the first sidewall spacer structure.