Non-volatile one-time programmable memory device
US9876123B2 · kind B2 · utility
3Cited by
8References
33Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 24, 2014 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Oct 28, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An apparatus includes a metal gate, a substrate material, and an oxide layer between the metal gate and the substrate material. The oxide layer includes a hafnium oxide layer contacting the metal gate and a silicon dioxide layer contacting the substrate material and contacting the hafnium oxide layer. The metal gate, the substrate material, and the oxide layer are included in a one-time programmable (OTP) memory device. The OTP memory device includes a transistor. A non-volatile state of the OTP memory device is based on a threshold voltage shift of the OTP memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.