Phase change memory cell and manufacturing method thereof using minitrenches
US9876166B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 10, 2011 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Jun 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A process forms a phase change memory cell using a resistive element and a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction transverse to the first dimension. The first thin portion and the second thin portion are in direct electrical contact and define a contact area of sublithographic extension. The second thin portion is delimited laterally by oxide spacer portions surrounded by a mold layer which defines a lithographic opening. The spacer portions are formed after forming the lithographic opening, by a spacer formation technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.