Radial and thickness control via biased multi-port injection settings
US9892913B2 · kind B2 · utility
448Cited by
0References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2017 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Mar 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.