Chemistries for TSV/MEMS/power device etching

US9892932B2 · kind B2 · utility

Assignees

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR
• American Air Liquide, Inc. · US
• Air Liquide Electronics U.S. LP · US

Inventors

• Peng Shen · Beijing, CN
• Christian Dussarrat · Tokyo, JP
• Curtis Anderson · Largo, US
• Rahul Gupta · Santa Clara, US
• Vincent M. Omarjee · Grenoble, FR
• Nathan Stafford · Happy Valley, US

Key dates

• Filing date: Jun 17, 2015
• Grant date: Feb 13, 2018
• Expiry date: Jun 17, 2035

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C09K13/00
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1 ≦x<7, 1≦y≦13, and 1≦z≦13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.