Patent · US Active

Method for producing a strained semiconductor on insulator substrate

US9899217B2 · kind B2 · utility

2Cited by

3References

22Claims

0Family size

Assignees

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
STMicroelectronics SA

Inventors

Shay Reboh · Grenoble, FR
Yves Morand · Grenoble, FR
Hubert Moriceau · Saint-Égrève, FR

Key dates

Filing date	Nov 28, 2014
Grant date	Feb 20, 2018
Priority date	—
Expiry date	Nov 28, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/201
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is provided for producing a microelectronic device provided with different strained areas in a superficial layer of a semi-conductor on insulator type substrate, including amorphizing a region of the superficial layer and then a lateral recrystallization of the region from crystalline areas adjoining the region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.