System, method and apparatus for ion milling in a plasma etch chamber
US9899227B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2013 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Feb 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02071
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system and method of ion milling performed in a plasma etch system including a plasma etch chamber, multiple process gas sources coupled to the plasma etch chamber, a radio frequency bias source and a controller. The plasma etch chamber including a substrate support. The substrate support being a non-pivoting and non-rotating substrate support. The substrate support capable of supporting a substrate to be processed on a top surface of the substrate support without use of a mechanical clamp device. The plasma etch chamber also including an upper electrode disposed opposite from the top surface of the substrate support. The radio frequency bias source is coupled to the substrate support. The controller is coupled to the plasma etch chamber, the multiple process gas sources and the radio frequency bias source. The controller including logic stored on computer readable media for performing an ion milling process in the plasma etch chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.