Insulated gate semiconductor device with soft switching behavior

US9899377B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
• Frank Pfirsch · Birkenfeld, DE
• Francisco Javier Santos Rodriguez · Villach, AT
• Stephan Voss · Munich, DE
• Wolfgang Wagner · Preetz, DE

Key dates

• Filing date: Oct 21, 2016
• Grant date: Feb 20, 2018
• Expiry date: Oct 21, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

A semiconductor device and a method for producing thereof is provided. The semiconductor device includes a plurality of device cells, each comprising a body region, a source region, and a gate electrode adjacent to the body region and dielectrically insulated from the body region by a gate dielectric; and an electrically conductive gate layer comprising the gate electrodes or electrically connected to the gate electrodes of the plurality of device cells. The gate layer is electrically connected to a gate conductor and includes at least one of an increased resistance region and a decreased resistance region.