Semiconductor device and method of forming the same
US9899491B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2016 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Jun 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of forming the same, the semiconductor device include a substrate, and a first gate structure and a second gate structure disposed on the substrate. The first gate structure includes a barrier layer, a first work function layer, a second work function layer and a conductive layer stacked one over another on the substrate. The second gate structure includes the barrier layer, a portion of the first work function layer and the conductive layer stacked one over another on the substrate, wherein the portion of the first work function layer has a smaller thickness than a thickness of the first work function layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.