Power semiconductor transistor having increased bipolar amplification

US9899504B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Roman Baburske · Otterfing, DE
• Johannes Georg Laven · Taufkirchen, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Antonio Vellei · Villach, AT

Key dates

• Filing date: Nov 22, 2016
• Grant date: Feb 20, 2018
• Expiry date: Nov 22, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

A transistor includes first and second load terminals and a semiconductor body coupled to both terminals. The semiconductor body includes: a drift region having dopants of a first conductivity type; a transistor section for conducting a forward load current and having a control head coupling the first load terminal to a first side of the drift region; and a diode section for conducting a reverse load current. A diode port couples the second load terminal to a second side of the drift region and includes: a first emitter electrically connected to the second load terminal and having dopants of the first conductivity type for injecting majority charge carriers into the drift region; and a second emitter having dopants of a second conductivity type for injecting minority charge carriers into the drift region. A pn-junction transition between the first and second emitters has a breakdown voltage of less than 10 V.