Semiconductor structure
US9899523B2 · kind B2 · utility
3Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2015 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Jan 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/796
Abstract
The present invention provides a semiconductor structure, comprising a substrate, a gate structure, a source/drain region and at least a dislocation. The gate structure is disposed on the substrate. The source/drain region is disposed in the substrate at two sides of the gate structure. The dislocation is located in the source/drain region, and is asymmetrical relating to a middle axis of the source/drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.