Single-crystal 4H-SiC substrate
US9903048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Jun 15, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24612
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A single-crystal 4H-SiC substrate includes a 4H-SiC bulk single-crystal substrate; and an epitaxial first single-crystal 4H-SiC layer on the 4H-SiC bulk single-crystal substrate and having recesses. The recesses have a diameter no smaller than 2 μm and no larger than 20 μm. The recesses have a depth no smaller than 0.01 μm and no larger than 0.1 μm. A single-crystal 4H-SiC substrate also includes a 4H-SiC bulk single-crystal substrate; and an epitaxial first single-crystal 4H-SiC layer on the 4H-SiC bulk single-crystal substrate and having recesses. The density of the recesses in the epitaxial first single-crystal 4H-SiC layer is at least 10/cm2, and the epitaxial first single-crystal 4H-SiC layer has a defect density no larger than 2/cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.