Semiconductor device and method for manufacturing the same
US9905462B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2015 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Dec 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/681
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, the stacked body includes a plurality of metal films, a plurality of silicon oxide films, and a plurality of intermediate films. The intermediate films are provided between the metal films and the silicon oxide films. The intermediate films contain silicon nitride. Nitrogen composition ratios of the intermediate films are higher on sides of interfaces between the intermediate films and the metal films than on sides of interfaces between the intermediate films and the silicon oxide films. Silicon composition ratios of the intermediate films are higher on sides of interfaces between the intermediate films and the silicon oxide films than on sides of interfaces between the intermediate films and the metal films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.