Substrate processing apparatus, method of manufacturing semiconductor device, and baffle structure of the substrate processing apparatus
US9911580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2011 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Jul 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.