Process for manufacturing a semiconductor substrate, and semiconductor substrate obtained
US9911641B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2013 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Jan 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process for manufacturing a semiconductor substrate, characterized in that it comprises providing at least one donor semiconductor substrate comprising at least one useful silicon layer; inspecting the donor substrate via an inspecting machine in order to detect whether the useful layer contains emerging cavities of a size larger than or equal to a critical size, said critical size being strictly smaller than 44 nm; and manufacturing a semiconductor substrate comprising at least part of the useful layer of the donor substrate if, considering cavities of a size larger than or equal to the critical size, the density or number of cavities in the useful layer of the donor substrate is lower than or equal to a critical defect density or number.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.