Source down semiconductor devices and methods of formation thereof

US9911686B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Manfred Schneegans · Vaterstetten, DE
• Andreas Meiser · Unterhaching, DE
• Martin Mischitz · Wernberg, AT
• Michael Roesner · Villach, AT
• Michael Pinczolits · Villach, AT

Key dates

• Filing date: May 16, 2016
• Grant date: Mar 6, 2018
• Expiry date: May 16, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3511
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side. The method further includes forming a seed layer over the first side of the semiconductor substrate, and forming a patterned resist layer over the seed layer. A contact pad is formed over the seed layer within the patterned resist layer. The method further includes removing the patterned resist layer after forming the contact pad to expose a portion of the seed layer underlying the patterned resist layer, and forming a protective layer over the exposed portion of the seed layer.