Patent · US Active

Semiconductor package structure and fabrication method thereof

US9911702B2 · kind B2 · utility

1Cited by
4References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 2, 2014
Grant dateMar 6, 2018
Priority date
Expiry dateJun 15, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/37001
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor package structure and a fabrication method thereof are provided. The fabrication method comprises: providing a substrate strip, the substrate strip comprising a plurality of substrate units; disposing a plurality of chips on the plurality of substrate units; disposing a packaging encapsulant on the substrate strip to encapsulate the chips; forming a warp-resistant layer on a top surface of the packaging encapsulant; and dividing the substrate strip to separate the plurality of substrate units to further fabricate a plurality of semiconductor package structures, wherein the warp-resistant layer is formed of a selected material with a selected thickness to make a variation of warpage of the semiconductor package structure at a temperature between 25° C. and 260° C. to be smaller than 560 μm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.