Integrated circuit comprising transistors with different threshold voltages
US9911737B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2013 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Oct 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83135
Abstract
An integrated circuit includes a substrate with first and second cells having first and second FDSOI field-effect transistors. There are first and second ground planes, a buried oxide layer and first and second wells, under the ground planes. The first well and the first ground plane have the same doping and the second well and the second ground plane have the same doping. The first and second cells are adjoined and their transistors are aligned in a first direction. The wells of the first cell and the first well of the second cell are doped opposite of the second well. A control device applies a first electrical bias to the wells with the first doping and a second electrical bias to the well with the second doping. The transistors of the first cell and second cell have different threshold voltage levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.