Low k dielectric deposition via UV driven photopolymerization
US9916977B2 · kind B2 · utility
7Cited by
121References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 16, 2015 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | Nov 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are methods and apparatus for ultraviolet (UV) assisted capillary condensation to form dielectric materials. In some embodiments, a UV driven reaction facilitates photo-polymerization of a liquid phase flowable material. Applications include high quality gap fill in high aspect ratio structures and por sealing of a porous solid dielectric film. According to various embodiments, single station and multi-station chambers configured for capillary condensation and UV exposure are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.