Inter-plane offset in backside contact via structures for a three-dimensional memory device

US9917093B2 · kind B2 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventors

• Cheng-Chung Chu · Milpitas, US
• Jayavel Pachamuthu · Milpitas, US
• Tuan Pham · Santa Clara, US
• Fumitoshi Ito · Yokohama, JP
• Masaaki Higashitani · Cupertino, US

Key dates

• Filing date: Jun 28, 2016
• Grant date: Mar 13, 2018
• Expiry date: Aug 4, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/50

Abstract

A three-dimensional memory device includes a plurality of planes, each having a respective alternating stack, strings of memory stack structures which extends through the respective alternating stack, and backside contact via structures vertically extending through the respective alternating stack, extending generally along the first horizontal direction, and laterally separating neighboring pairs of strings of memory stack structures along a second horizontal direction. A first plane includes a first plurality of strings that are laterally spaced apart along the second horizontal direction by a first plurality of backside contact via structures. A second plane laterally shifted from the first plane along the first horizontal direction and including a second plurality of strings that are laterally spaced apart along the second horizontal direction by a second plurality of backside contact via structures which are laterally offset with respect the first plurality of backside contact via structures along the second horizontal direction.