Bipolar transistor with superjunction structure

US9917181B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Frank Pfirsch · Birkenfeld, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Stephan Voss · Munich, DE

Key dates

• Filing date: Oct 18, 2016
• Grant date: Mar 13, 2018
• Expiry date: Oct 18, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A superjunction bipolar transistor includes an active transistor cell area that includes active transistor cells electrically connected to a first load electrode at a front side of a semiconductor body. A superjunction area overlaps the active transistor cell area and includes a low-resistive region and a reservoir region outside of the low-resistive region. The low-resistive region includes a first superjunction structure with a first vertical extension with respect to a first surface of the semiconductor body. The reservoir region includes no superjunction structure or a second superjunction structure with a mean second vertical extension smaller than the first vertical extension.