III-N semiconductor layer on Si substrate
US9917193B2 · kind B2 · utility
1Cited by
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5Claims
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Key dates
| Filing date | Aug 30, 2016 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | Aug 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing III-N semiconducting material on a silicon substrate including the steps of growing a layer of epitaxial rare earth oxide on a single crystal silicon substrate and modifying the surface of the layer of epitaxial rare earth oxide with nitrogen plasma. The method further includes the steps of growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide and growing a layer of bulk epitaxial III-N semiconductive material on the layer of low temperature epitaxial gallium nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.