Trench silicide contacts with high selectivity process
US9923078B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 30, 2015 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Oct 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming self-aligned contacts includes patterning a mask between fin regions of a semiconductor device, etching a cut region through a first dielectric layer between the fin regions down to a substrate and filling the cut region with a first material, which is selectively etchable relative to the first dielectric layer. The first dielectric layer is isotropically etched to reveal source and drain regions in the fin regions to form trenches in the first material where the source and drain regions are accessible. The isotropic etching is super selective to remove the first dielectric layer relative to the first material and relative to gate structures disposed between the source and drain regions. Metal is deposited in the trenches to form silicide contacts to the source and drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.