Patent · US Active

Method for manufacturing a semiconductor device

US9929107B1 · kind B1 · utility

4Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albert Birner · Regensburg, DE
Helmut Brech · Lappersdorf, DE

Key dates

Filing date	Dec 6, 2016
Grant date	Mar 27, 2018
Priority date	—
Expiry date	Dec 6, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment, a method includes forming an opening in a front surface of a substrate including at least one Group III nitride-based transistor on the first surface, inserting conductive material into the opening, and coupling a source electrode of the Group III nitride-based transistor to a rear surface of the substrate with the conductive material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.