Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions

US9934972B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Aichinger · Faak am See, AT
• Wolfgang Bergner · Waldbüttelbrunn, DE
• Romain Esteve · Munich, DE
• Daniel Kueck · Villach, AT
• Dethard Peters · Edenkoben, DE
• Victorina Poenariu · Villach, AT
• Gerald Reinwald · Wernberg, AT
• Roland Rupp · Achern, DE
• Gerald Unegg · Villach, AT

Key dates

• Filing date: Oct 7, 2016
• Grant date: Apr 3, 2018
• Expiry date: Oct 7, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.