Patent · US Active

Method for processing a silicon wafer

US9934988B2 · kind B2 · utility

0Cited by

1References

33Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Werner Schustereder · Villach, AT
Helmut Oefner · Zorneding, DE
Hans-Joachim Schulze · Taufkirchen, DE
Sandeep Walia · Villach, AT

Key dates

Filing date	Dec 14, 2016
Grant date	Apr 3, 2018
Priority date	—
Expiry date	Dec 14, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/30604
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Disclosed is a method for processing a semiconductor wafer. The method includes forming an oxygen containing region in the semiconductor wafer, wherein forming the oxygen containing region includes introducing oxygen via a first surface into the semiconductor wafer. The method further includes creating vacancies at least in the oxygen containing region and annealing at least the oxygen containing region in an annealing process so as to form oxygen precipitates.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.