Patent · US Active

Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer

US9941111B2 · kind B2 · utility

0Cited by

6References

12Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gerhard Schmidt · Graz, AT
Markus Kahn · Rangersdorf, AT
Christian Maier · Kettenham, DE
Philipp Koch · Villach, AT
Juergen Steinbrenner · Zistersdorf, AT

Key dates

Filing date	May 29, 2015
Grant date	Apr 10, 2018
Priority date	—
Expiry date	May 29, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D12/441
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to various embodiments, a method for processing a semiconductor layer may include: generating an etch plasma in a plasma chamber of a remote plasma source, wherein the plasma chamber of the remote plasma source is coupled to a processing chamber for processing the semiconductor layer; introducing the etch plasma into the processing chamber to remove a native oxide layer from a surface of the semiconductor layer and at most a negligible amount of semiconductor material of the semiconductor layer; and, subsequently, depositing a dielectric layer directly on the surface of the semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.