Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication
US9941113B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2017 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | May 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple frequencies and in which a phase angle relationship is controlled between the radiofrequency signals of multiple frequencies. In the system, a pedestal is provided to support the wafer. A plasma generation region is formed above the pedestal. An electrode is disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals into the plasma generation region. A radiofrequency power supply provides multiple radiofrequency signals of different frequencies to the electrode. A lowest of the different frequencies is a base frequency, and each of the different frequencies that is greater than the base frequency is an even harmonic of the base frequency. The radiofrequency power supply provides for variable control of the phase angle relationship between each of the multiple radiofrequency signals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.