Nonvolatile semiconductor memory device and method for manufacturing same
US9941296B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2017 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Feb 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.