Semiconductor devices, a fluid sensor and a method for forming a semiconductor device

US9941432B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Stefan Clara · Linz, AT
• Thomas Grille · Villach, AT
• Ursula Hedenig · Villach, AT
• Peter Irsigler · Ried im Innkreis, AT
• Bernhard Jakoby · Linz, AT
• Ventsislav Lavchiev · Linz, AT
• Thomas Ostermann · Velden am Wörther See, AT
• Thomas Popp · Rockenhausen, DE

Key dates

• Filing date: May 27, 2016
• Grant date: Apr 10, 2018
• Expiry date: Jun 29, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/036

Abstract

A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm.