High efficiency inductively coupled plasma source with customized RF shield for plasma profile control
US9945033B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2014 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Aug 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B6/62
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Apparatus for processing substrates are provided herein. In some embodiments, plasma processing apparatus may include a process chamber having a dielectric lid and an interior processing volume beneath the dielectric lid, a first RF coil to couple RF energy into the processing volume, and an RF shielded lid heater coupled to a top surface of the dielectric lid. The RF shielded lid heater may include an annular member, and a plurality of spokes, wherein each of the plurality of spokes includes one of (a) a first portion that extends downward from the annular and couples the annular member to a second portion of the spoke that extends radially inward, or (b) a first portion that extends radially outward from the annular member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.