Method for conditioning silicon part
US9947558B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Aug 12, 2016 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Aug 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for conditioning and cleaning a silicon part is provided. The silicon part is heated to a temperature of at least 300° C. in the presence of oxygen to form an outer surface of the silicon part into silicon oxide. The silicon part is placed in a wet bath wherein the bath is a solution that selectively etches silicon oxide with respect to silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.