Processes for preventing oxidation of metal thin films
US9947582B1 · kind B1 · utility
1Cited by
19References
21Claims
0Family size
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Key dates
| Filing date | Jun 2, 2017 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Jun 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processes are provided herein for protecting metal thin films from oxidation when exposed to an oxidizing environment, such as the ambient atmosphere. The processes may comprise a protective treatment including exposing the metal thin film to a silicon-containing precursor at a temperature of about 200° C. or less in order to selectively adsorb a silicon-containing protective layer on the metal thin film. The silicon-containing protective layer may reduce or substantially prevent the underlying metal thin film from oxidation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.