Electronic device including a transistor and a field electrode

US9947654B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Woochul Jeon · Phoenix, US
• Ali Salih · Mesa, US

Key dates

• Filing date: Sep 8, 2016
• Grant date: Apr 17, 2018
• Expiry date: Sep 13, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

In an aspect, a cascode circuit can include a high-side transistor and a low-side transistor. The source of the high-side transistor can be coupled to the drain of the low-side transistor; and the gate of the high-side transistor can be coupled to each of the source and the gate of the low-side transistor. In another aspect, an electronic device can include a high-side transistor, a low-side transistor, and a field electrode. The low-side transistor can include a drain region coupled to the source electrode of the high-side transistor. The field electrode can overlie and be capacitively coupled to a channel layer of the high-side transistor, wherein the field electrode is configured to be at a voltage between the voltages of the high-side and low-side power supply terminals.