Contact wrap around structure

US9953979B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Jeffrey Junhao Xu · San Diego, US
• Stanley Seungchul Song · San Diego, US
• Vladimir Machkaoutsan · Leuven, BE
• Mustafa Badaroglu · Kessel-Lo, BE
• Junjing Bao · Fishkill, US
• John Jianhong Zhu · San Diego, US
• Da Yang · San Diego, US
• Choh Fei Yeap · San Diego, US

Key dates

• Filing date: Mar 30, 2015
• Grant date: Apr 24, 2018
• Expiry date: Mar 30, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a gate stack. The semiconductor device also includes a wrap-around contact arranged around and contacting substantially all surface area of a regrown source/drain region of the semiconductor device proximate to the gate stack.