Patent · US Active

Method of forming a semiconductor device and semiconductor device

US9954065B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Anton Mauder · Kolbermoor, DE
Frank Pfirsch · Birkenfeld, DE
Hans-Joachim Schulze · Taufkirchen, DE
Ingo Muri · Villach, AT
Iris Moder · Villach, AT
Johannes Baumgartl · Arnoldstein, AT

Key dates

Filing date	Nov 9, 2015
Grant date	Apr 24, 2018
Priority date	—
Expiry date	Nov 9, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In accordance with a method of forming a semiconductor device, an auxiliary structure is formed at a first surface of a silicon semiconductor body. A semiconductor layer is formed on the semiconductor body at the first surface. Semiconductor device elements are formed at the first surface. The semiconductor body is then removed from a second surface opposite to the first surface at least up to an edge of the auxiliary structure oriented to the second surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.