Method for forming semiconductor device
US9960084B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2016 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Nov 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming a semiconductor device, comprising the following steps: firstly, a substrate is provided, having a NMOS region and a PMOS region defined thereon, next, a gate structure is formed on the substrate within the NMOS region, and a disposal spacer is formed on two sides of the gate structure, afterwards, a mask layer is formed on the PMOS region to expose the NMOS region, next, a recess is formed on two sides of the gate structure spaced from the gate structure by the disposal spacer within the NMOS region, the disposal spacer is then removed after the recess is formed, and an epitaxial layer is formed into the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.