Patent · US Active

Method for forming a semiconductor device and a semiconductor device

US9972704B2 · kind B2 · utility

1Cited by

0References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Moriz Jelinek · Villach, AT
Johannes Georg Laven · Taufkirchen, DE
Helmut Oefner · Zorneding, DE
Hans-Joachim Schulze · Taufkirchen, DE
Werner Schustereder · Villach, AT

Key dates

Filing date	Nov 9, 2015
Grant date	May 15, 2018
Priority date	—
Expiry date	Nov 9, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D12/032
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.